dm n12 5 0 u fel document number: ds 37787 rev. 3 - 2 1 of 7 www.diodes.com august 2015 ? diodes incorporated dm n12 5 0 u f e l n - channel enhancement mode mosfet features ? low gate charge ? r ds(on) : 280 m ? @ v gs = 4 .5 v (single mosfet) ? 8 n - c hannel mosfet in 1 d evice ? common s ource ? small footprint 1.5mm 1.5mm ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliabilit y mechanical data ? case: u - qfn1515 - 12 ? case material - molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin a nnealed over copper l eadframe . solderable per mil - std - 202, method 208 ? terminal connections: see diagram ? weight: 0. 00 4 grams ( a pproximat e) ordering information (note 4 ) part number case packaging dm n12 5 0 u f e l - 7 u - qfn1515 - 12 3 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green " and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information date code key year 20 14 20 15 201 6 201 7 201 8 201 9 20 20 20 21 code b c d e f g h i month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u - qfn1515 - 12 bottom view equivalent circuit a1 = product type marking code ym = date code marking y = year (ex: b = 20 14 ) m = month (ex: 8 = august ) s d3 d8 s s d4 d7 d6 d5 d2 d1 s g u - qfn1515 - 12
dm n12 5 0 u fel document number: ds 37787 rev. 3 - 2 2 of 7 www.diodes.com august 2015 ? diodes incorporated dm n12 5 0 u f e l maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 12 v gate - source voltage v gss ? a = + 25 c t a = + 70c i d 2 . 0 1 . 6 a pulsed drain current (note 7 ) i dm 10 a thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) p d 0 . 66 w total power dissipation (note 6 ) p d 1 . 25 w thermal resistance, junction to ambient (note 5 ) r ja 1 77 c/w thermal resistance, junction to ambient (note 6 ) r ja 100 c/w ? j , t stg - 55 to +150 c notes: 5 . device mounted on 1"x1" , fr - 4 pc board with minimum recommended pad layout , and test with single mosfet . 6 . device mounted on 1"x1", fr - 4 pc board with 2 oz . copper , and test with single mosfet . 7 . repetitive rating, pulse width limited by junction temperature , and test with single mosfet . electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition static characteristics drain - source breakdown voltage bv dss 12 ? ? d = 250 a , v gs = 0v zero gate voltage drain current i dss ? ? ds = 12 v , v gs = 0v gate - body leakage current i gss ? ? ? ds = 0v, v gs = ? gs( th ) 0. 4 ? ds = v gs , i d = 250 a static drain - source on - resistance (note 8 ) r ds (on) ? ? gs = 4.5v, i d = 0. 2 a ? ? ? gs = 2 .5v, i d = 0. 1 a forward transfer admittance |y fs | ? ? ds = 6 v , i d = 0. 2 a diode forward voltage (note 8 ) v sd ? s = 0.2 a, v gs = 0v dynamic characteristics (note 9 ) input capacitance c iss ? ? ds = 6 v , v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? gs = 0v, v ds = 0v, f = 1mhz switching characteristics ( note 9 ) total gate charge q g ? gs = 4.5v, v ds = 6 v , i d = 0. 2 a gate - source charge q gs ? ? gd ? ? d( on ) ? dd = 6 v, v gs = 4.5v, r l = 22 ? g = 6 ? r ? ? d( off ) ? f ? ? notes: 8 . test pulse width t = 300ms , test with single mosfet. 9 . guarante e d by design with single mosfet , n ot subject to production testing .
dm n12 5 0 u fel document number: ds 37787 rev. 3 - 2 3 of 7 www.diodes.com august 2015 ? diodes incorporated dm n12 5 0 u f e l 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =1.5v v gs =1.2v v gs =2.0v v gs =2.5v v gs =3.0v v gs =4.0v v gs =4.5v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.5 1 1.5 2 2.5 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5v - 55 25 85 150 125 0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 12 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =200ma i d =100ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.2 0.4 0.6 0.8 1 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =2.5v v gs =4.5v 0.4 0.6 0.8 1 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs =4.5v, i d =200ma v gs =2.5v, i d =100ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.5 1 1.5 2 2.5 3 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature v gs = 4.5v - 55 25 85 125 150
dm n12 5 0 u fel document number: ds 37787 rev. 3 - 2 4 of 7 www.diodes.com august 2015 ? diodes incorporated dm n12 5 0 u f e l 0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs =2.5v, i d =100ma v gs =4.5v, i d =200ma 0.4 0.6 0.8 1 1.2 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d =250 a i d =1ma 1 10 100 1000 0 2 4 6 8 10 12 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 0.5 1 1.5 2 2.5 3 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t j = - 55 v gs =0v, t j =25 v gs =0v, t j =85 v gs =0v, t j =125 v gs =0v, t j =150 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 0.3 0.6 0.9 1.2 1.5 v gs (v) q g (nc) figure 11. gate charge v ds =6v, i d =200ma 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 a =25 gs =4.5v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm n12 5 0 u fel document number: ds 37787 rev. 3 - 2 5 of 7 www.diodes.com august 2015 ? diodes incorporated dm n12 5 0 u f e l 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t)=r(t) * r ja r ja =177
dm n12 5 0 u fel document number: ds 37787 rev. 3 - 2 6 of 7 www.diodes.com august 2015 ? diodes incorporated dm n12 5 0 u f e l package outline dimensions please see ap02002 at http://w ww.diodes.com/datasheets/ap02002 .pdf for the latest version. suggested pad layout please see ap02001 at http://w ww.diodes.com/datasheets/ap02001 .pdf for the latest version. u - qfn1515 - 12 dim min max typ a 0. 57 0. 63 0.60 a1 0 .00 0.05 0.02 a 3 0.152 bsc b 0. 15 0. 25 0. 20 d 1.45 1.55 1.50 d2 0.60 0.80 0.70 e 1.45 1.55 1.50 e2 0.60 0.80 0.70 e 0.40 bsc l 0. 15 0. 25 0. 20 k -- -- 0.25 z -- -- 0.050 all dimensions in mm dimensions value (in mm) c 0.400 g 0.175 x 0.400 x1 0.700 x2 1.800 y 0.250 y1 0.700 y2 1.450 y3 1.800 u - qfn1515 - 12 u - qfn1515 - 12 a1 a3 pin1 id seating plane d e b d2 e2 l e k z a x y1 y x1 g x2 y3 y2 c
dm n12 5 0 u fel document number: ds 37787 rev. 3 - 2 7 of 7 www.diodes.com august 2015 ? diodes incorporated dm n12 5 0 u f e l important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indem nify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applic ation. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this d ocument is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are spe cifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or syst ems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , diodes incorporated www.diodes.com
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